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HEXFET® Power MOSFET
Specifically designed for Automotive applications,this HEXFET® Power MOSFET utilizes the latestprocessing techniques to achieve extremely lowon-resistance per silicon area. Additional featuresof this product are a 175°C junction operatingtemperature, fast switching speed and improvedrepetitive avalanche rating. These features combineto make this design an extremely efficient andreliable device for use in Automotive applicationsand a wide variety of other applications.
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